Self-aligned silicide contacts formed from deposited silicon

摘要

Self-aligned silicide contacts having a height that is at least about equal to the gate height are formed by depositing silicon over active regions of the substrate, depositing a refractory metal over the silicon, and heating the silicon and the refractory metal. The deposited silicon may be amorphous silicon in which case the deposition temperature can be as low as 580 DEG C. If polysilicon is deposited, the deposition temperature has to be at least 620 DEG C.