| 摘要 |
PURPOSE: An improved method for correcting a photo-contiguous effect in a fabrication process of a semiconductor device, especially in exposure and transfer steps of a photo-lithographic process, is provided to prevent the deterioration of resolution and further not to increase correction cycle. CONSTITUTION: A pre-modified layout data in a computer(66) includes a first layer(12) such as a plug layer or a via hole layer formed on a first level mask, and a second layer(11) such as a gate layer or an interconnection layer formed on a second level mask. In a method for correcting a photo-contiguous effect, a first peripheral region(44) is defined in the first mask to surround the first layer(12), and corners(17,18) of the second layer(11) belonging to the first peripheral region(44) are then specified. Next, second peripheral regions(23,24) are defined in the second mask to surround the corners(17,18), respectively, and then added to the first peripheral region(44) in the first mask. Thereby, post-modified layout data are created in the computer(66). According to the correcting method, no correction is made only in the second layer(11) without the first layer(12). Therefore, correction cycle and data are not increased. |
