| 摘要 |
PURPOSE: A wire structure of a semiconductor device and a fabrication method thereof are provided which can suppress the generation and proceeding of EM(Electro-Migration) of aluminum. CONSTITUTION: A wire structure(40) of a semiconductor device includes: a bottom wire layer(44) formed on an insulation layer(46) on a silicon substrate; a top wire layer(50a) which has an aluminum as a main component and is connected to the bottom wire layer by a via plug(48) formed on the insulation layer; and a first barrier metal layer(52) having a higher £111| orientation diagram. The first barrier metal layer is a stacked film including a Ti layer(52a) and a TiN layer(52b). And, the via plug includes a second barrier metal layer(48a) and a tungsten layer(48b), and the top wire layer is formed with an Al-Cu alloy. |
