| 摘要 |
PURPOSE: A semiconductor device is provided to form on a SOI substrate having a high-concentration impurity diffusion region and to apply to an integrated circuit operated by a low voltage, and a manufacturing method thereof. CONSTITUTION: A semiconductor device with an SOI structure comprises; an SOI substrate having a buried insulating film and a first conductivity type surface semiconductor layer on the buried insulating film; second conductivity type source and drain regions formed in the surface semiconductor layer; and a gate electrode formed over a first conductivity type channel region between the source and drain regions via a gate insulating film, wherein the source and drain regions are thinner than the surface semiconductor layer, and the channel region in the surface semiconductor layer has a first conductivity type high-concentration impurity diffusion region whose first conductivity type impurity concentration is higher than that in a surface of the channel region and which is adjacent to the buried insulating film.
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