METHOD FOR FORMING MICRO METAL LINE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming micro metal lines of a semiconductor device is provided to make the adjustment of the width and depth of the micro metal line more easily. CONSTITUTION: A method for forming micro metal lines of a semiconductor device includes following steps. At the first step, a contact is formed on the interlayer insulation layer(10). At the second step, a metal plug(20) is formed in the contact. At the third step, an adhesive/seed metal layer/non reflection layer(30/40/50) are deposited sequentially. At the forth step, a photoresist layer(60) is deposited on the portion at which a micro metal line is to be formed on the non-reflection layer. At the fifth step, the seed metal layer is exposed by forming a contact hole(75) by etching the non-reflection layer around the contact portion of the photoresist layer. At the sixth step, the metal layer is extended to a thickness of the photoresist layer. The portion of the adhesive/seed metal layer/non reflection layer(30/40/50) except from the lower portion of the metal layer is removed.