| 摘要 |
PURPOSE: A method is provided to making a conductor or electric circuit balanced in radioelectric interference, including those derived from the circuit itself. CONSTITUTION: A memory device consist in applying a semiconducting material(2) of per unit length resistivity for maintaining the external surface of the conductor(1) to the electric circuit with a static electric potential close to that of the conductor(1) and for absorbing the erratic discharge currents to eliminate the interface micro-discharge interference phenomena. The device is applicable to the fields of high fidelity equipment, house automation, and instrumentation.
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