| 摘要 |
PURPOSE: A method is provided to use a capacitor having a tungsten nitride diffusing barrier instead of a titanium nitride in an integrated circuit when a dielectric material is a five oxide tantalum. CONSTITUTION: A method for manufacturing a capacitor includes steps of forming a first electrode(220), which includes a first barrier layer and a titanium layer selected from the group consisted of a tungsten nitride, a nitrided tungsten silicide(225) and a mixture of them, and which there is really not the titanium nitride layer, on a substrate, forming a dielectric material of the capacitor, which is reduced by the titanium, on the first electrode, and forming a second electrode including an electrical conductive layer(140) on the dielectric material of the capacitor.
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