METHOD FOR MONITORING CHEMICAL AND MECHANICAL POLISHING PROCESS USING TEST PATTERN

摘要

PURPOSE: A method for monitoring CMP(Chemical and mechanical polishing) process using a test pattern is to measure a degree of over-polishing during the CMP process, thereby enhancing the reliability of the monitoring. CONSTITUTION: A method for monitoring CMP process using a test pattern comprises the steps of: forming an interconnection(33) at a cell region(CA2) on a substrate(31) having the cell region and a test pattern region(TA2); forming an insulating layer(35) covering the interconnection on the substrate; patterning the insulating layer to form a connection passage(37) to expose the interconnection at the cell region and forming a first pattern(39) and a second pattern(41-1,...,41-n) having a width smaller than the first pattern; depositing a conductive layer(43) such that the connection passage is filled and the first and second pattern are covered; and chemical and mechanical polishing the deposited conductive layer such that the conductive layer filled in the connection passage remains and a part of the second pattern which is adjacent to the first pattern is exposed.