| 摘要 |
PURPOSE: A method for forming a device isolation layer of a trench structure of a semiconductor device is provided to reduce humps by dispersing electric field along with a round shape of a trench edge. CONSTITUTION: A method for forming a device isolation layer of a trench structure of a semiconductor device includes following steps. At the first step, a pad oxide layer(102) and a nitride layer(104) are accumulated sequentially on a semiconductor substrate(10). At the second step, a trench(106) is formed in the semiconductor substrate by etching the lower portion of the substrate with a device isolation mask process and an etching process. At the third step, an oxide layer is buried in the trench and the oxide layer is flattened so as to be lower than the nitride layer. At the fourth step, the edge portion of the trench is formed to be round by performing the oxidation process at the temperature in the range of 900-1200°C. At the fifth step, the nitride layer is removed and a rinsing process is performed.
|
