METHOD FOR MANUFACTURING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A capacitor manufacturing method of a semiconductor device is to ensure a high capacitance by suppressing a growth of a natural oxide film between a lower electrode and a high dielectric Ta2O5 film. CONSTITUTION: A method for fabricating a capacitor of a semiconductor device comprises the steps of: forming a lower electrode(30') consisting of a conductive layer, connected to a semiconductor substrate(10) through a contact hole of an interlayer insulating film(20); forming a thin silicon nitride film(32) on an upper surface of the lower electrode by using NH3/SiH2Cl2 gas within a single wafer chamber or a batch furnace; forming a Ta2O5 film(34) as a dielectric between electrodes on an upper surface of the silicon nitride film; and forming an upper electrode(36) consisting of the conductive layer on an upper surface of the Ta2O5 film. The silicon nitride film is formed under a temperature condition of 630 to 710°C and a pressure condition of 0.2 to 0.5 Torr within the batch furnace, and under a temperature condition of 630 to 690°C and a pressure condition of 0.8 to 1.2 Torr within the single wafer chamber.