FORMATION METHOD OF BIT LINE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a bit line of a semiconductor device is provided to reduce a contact resistance by a formation of TiSi2 layer in a junction region as to improve a drive of the semiconductor device. CONSTITUTION: A bit line forming method comprises the steps of: depositing an interlayered insulation film on a semiconductor substrate(10) on which a field oxidation layer(20) and a word line(30) is deposited, and etching the interlayered insulation film to form a contact; depositing a Co layer(70) and a Ti layer(80) into the contact; annealing the former so as to form a CoSi2 layer on a junction region, to form a Co-Ti layer(100) between the Co layer and the Ti layer, and to convert the Ti layer into a TiN layer; and depositing a W layer in a contact of the TiN layer to form a bit line.