| 摘要 |
PURPOSE: A repair fuse forming method of MML(Merged Memory Logic) semiconductor device is provided to improve a repair fuse fabrication of MML device by easily etching an interlayer insulating film. CONSTITUTION: A MML device is divided into a cell region, a periphery region, and a logic region. A capacitor charge storage electrode(30) is formed by etching a lower insulating layer(20) formed on a semiconductor substrate(10). After depositing and etching a polysilicon layer(40) on the capacitor charge storage electrode, a repair fuse(45) is formed on the periphery region. A photosensitive film is then deposited on the cell region and the periphery region. After etching the lower insulating layer of the logic region, an opening is formed to open the lower insulating layer of the logic region. A titanium silicide layer(70) is then deposited on the polysilicon layer of the cell region, the repair fuse of the periphery region, and the semiconductor substrate of the logic region. After depositing on an interlayer insulating layer(80) on the resultant material and smoothing it by a chemical machine polishing, a plurality of upper insulating layer(90) are formed on the interlayer insulating layer. The repair fuse is exposed by etching the resultant material.
|
