METHOD FOR CLEARNESS OF SUBSTRATE MARK

摘要

PURPOSE: A method for clearness of substrate mark is provided to clear a substrate mark to control semiconductor wafers efficiently. CONSTITUTION: A conductor layer(14), an insulator layer(16), and a metal wiring membrane(18) are doped on a silicon wafer(12) by sequence. And photoresist film covers the metal wiring membrane(18) except a substrate mark area(30). After etching and removing the photoresist film, the metal wiring membrane(18) is erased in the substrate mark area. An insulator layer(16) is flatten by a first inter metal dielectric and a CMP(Chemical Mechanical Polishing) process. Another metal wiring membrane(18') is built and a photoresist film shields the insulator layer(16). After masking and exposing the substrate mark(30), the another metal wiring membrane(18') is etched. A second inter metal dielectric-CMP process is done and the same steps is enforced for creating the other metal wiring membrane(18''). A semiconductor manufacturing process is completed by covering a passivation(50) on the substrate(10).