METHOD OF FORMING SILICIDE LAYER OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of forming a silicide layer is provided to reduce a leakage current by forming an alloy silicide layer at a junction region and polysilicon layer of a gate electrode. CONSTITUTION: A gate oxide film(30) and a polysilicon layer(40) are deposited on a semiconductor substrate(10) formed with a field oxide film(20). At that time, the substrate is etched by a masking etching process to form a gate electrode(A), and is deposited with an oxide film(50) to form a spacer on a side of the gate electrode. A side of the gate electrode is formed with a spacer film(60) by a selectivity etching process, and an ion is injected into a junction region to form a source/drain region(70). The substrate is deposited with a Ni layer(8) and a Co layer(90). The Ni layer and the Co layer are primarily annealed to form an alloy silicide layer on the junction region and the polysilicon layer.