| 摘要 |
PURPOSE: A method of exposing a mask pattern for fabricating semiconductor to light is provided to apply a snap-to-grid and approximation method to prevent a pattern distortion with respect to a pattern having an error angle except for 45 degrees, thereby efficiently performing an OPC(Optical Proximity Correction) compensation. CONSTITUTION: A method of exposing a mask pattern for fabricating semiconductor to a light comprises steps of detecting a starting point(A) and an ending point(B) about a hypotenuse(12) of a right-angled triangle(11), two-dimensionally dividing both end point of a hypotenuse to prevent a pattern distortion in the hypotenuse when an angle of the hypotenuse is not 45 degrees, classifying all points within an entire area two-dimensionally divided into a same co-ordinate, and exposing the mask pattern to a light. In the method, the area is equally divided based on the stating point and the ending point of the hypotenuse.
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