| 摘要 |
<p>PURPOSE: A semiconductor device and a fabrication method thereof are provided to suppress the leakage current, and reduce the leakage current from the insulating layer of a capacitor and increase the capacity of the capacitor. CONSTITUTION: A semiconductor device comprises a stack type capacitor cell including: a convex bottom electrode formed on a semiconductor substrate(11); a capacitor insulating layer formed to cover the surface of the bottom electrode; and a top electrode formed on the capacitor insulating layer. And, at least one layer of gate cap layer(15) is formed between an end part of the upper surface of the bottom electrode and the capacitor insulating layer, and the gate cap layer is formed with an insulator.</p> |
