| 摘要 |
PURPOSE: A semiconductor fabrication method is provided to improve the reliability of the semiconductor device by improving the adhesion property of a multilayered structure. CONSTITUTION: A semiconductor device(30) comprises a multilayered structure including a wire pattern(33) and a low conductivity interlayer dielectric, which is formed with a SiO2 film(34) containing F. And a SiO2 film(32) having a higher refractive index than the low conductivity SiO2 film is formed at least on one side of the low conductivity SiO2 film containing F. The interlayer dielectric is covered with a passivation film, and the SiO2 film having a high refractive index is formed by a plasma CVD process. |
