| 摘要 |
PURPOSE: A crosslinking monomer for photoresist, the polymer and photoresist composition are provided, which is comprised photoacid generator, matrix polymer. The crosslinking monomer improves polymerization yield of photoresist polymer and is not reduced etching-resistance, heat-resistance and sticking property. CONSTITUTION: A crosslinking monomer is represented by the following formular 1. The photoresist polymer is represented by the following formular 4, wherein, R' and R'' is independently hydrogen or methyl, m is one of 1-10, p is one of 0-5, a is 1-50 mol%, b is 10-50 mol%, c is 0.1-50 mol%, R1, R2, R3 and R4 is independently hydregen; alkyl, ester, keton, carboxylic acid and acetal substituted side chain or main chain of carbon number of 1-10; alkyl, ester, keton, carboxylic acid or acetal substituted that containing at least one of hydroxide group. The photoresist composition comprises the crosslinking monomer represented by the formular 1, photoresist polymer, organic solvent and optionally photoacid generate.
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