METHOD FOR MONITORING CONTAMINATION AMOUNT OF WAFER

摘要

PURPOSE: A method for monitoring contamination amount of a wafer is provided to detect the contamination of the wafer using an AFM(atomic force microscopy) equipment. CONSTITUTION: A method for monitoring contamination amount of a wafer according to the present invention includes following steps. At the first step, an oxide layer(20) is deposited on a wafer(10). At the second step, the wafer is left on a line stocker so as for a contaminant(30) to be adhered to the wafer surface. At the third step, the chemicals on the wafer surface is rinsed by way of pure water. At the forth step, the wafer is deposited in light HF solution. At the fifth step, the wafer is rinsed for the second time using the pure water. At the sixth step, the wafer is dried and the surface is analyzed using the atomic force microscopy equipment. The oxide layer is deposited over than a thickness of 100 angstrom.