| 摘要 |
PURPOSE: A method for forming a gate electrode of a semiconductor apparatus is to prevent from a gate depletion and to increase a driving ability of current allowing a PMOS transistor to be further integrated, so as to improve a device characteristics. CONSTITUTION: A gate electrode forming method comprises the steps of: depositing a gate oxidation layer(20) and a polysilicon layer in order on a semiconductor substrate(10); primary ion implanting the polysilicon layer; depositing a W-silicide(40) on the entire face of the polysilicon layer; and secondary ion implanting the W-silicide so as to prevent from a diffusion of ion from the polysilicon layer to the W-silicide, the polysilicon layer being deposited in the range of 500°C to 540°C in temperature, 0.1 to 1.0 torr in pressure, and 700 to 900 angstrom using a Si2H6.
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