METHOD FOR FORMING DUAL GATE ELECTRODE

摘要

PURPOSE: A method for forming a dual gate electrode is provided to adjust the threshold voltage of the transistor by using a TED(transient enhanced diffusion) effect. CONSTITUTION: A method for forming a dual gate electrode according to the present invention includes following steps. At the firth step, an n-well(33) as well as a p-well(35) are formed on a first gate electrode region and a second a second gate electrode on the semiconductor device, respectively. At the second step, a first gate insulation layer(41) is formed on the surface of the result of the first step. At the third step, a photoresist pattern(43) is formed on the surface of the first gate insulation layer by using an exposure and development process. At the forth step, a 4-valence impurity is implanted on the surface of the semiconductor substrate by using the photoresist pattern as a mask. At the fifth step, a first gate insulation layer(41) is etched. At the sixth step, a second gate insulation layer(49) is formed by thermo-manipulating the semiconductor substrate.