ELECTRIC FIELD ABSORBING OPTICAL MODULATOR WITH N(-)-I-N(+) CONFIGURATION

摘要

PURPOSE: An electric field absorbing optical modulator with N(-)-I-N(+) configuration is provided to implemented the optical modulator with wells doped with different concentrations. CONSTITUTION: An electric field absorbing optical modulator with N(-)-I-N(+) configuration includes a first N type material layer, an intrinsic material layer and a second N type material layer. The first N type material layer is doped at a predetermined concentration. The intrinsic material layer receives optical light for optical modulation and is formed on the surface of the first N type material layer. The second N type material layer is doped at a concentration lower than the predetermined concentration for the first layer.