METHOD FOR PREVENTING BLACK SILICON FROM BEING FORMED ON WAFER EDGE AND APPARATUS FOR DOING THE SAME

摘要

PURPOSE: A method for preventing a black silicon from being formed on a wafer edge and an apparatus for doing the same are provided to increase the chip yield by rejecting black silicon spike from the semiconductor substrate. CONSTITUTION: A method for preventing a black silicon from being formed on a wafer edge includes following steps. At the first step, a wafer(10) is provided for manufacturing the semiconductor chip. At the second step, a first layer(16) is deposited on the whole surface(14) of the silicon wafer. At the third step, the first layer is removed from the silicon wafer so as to expose a region fit for the semiconductor device. At the forth step, the wafer is etched so as to prevent the etched material from remaining on the wafer. The first layer according to one embodiment of the present invention is an oxide layer.