BOOSTED SENSE GROUND CIRCUIT

摘要

PURPOSE: A memory array sensing techniques for a low voltage operation used a stable BSG(boosted sense ground) is provided. CONSTITUTION: A noise control circuit(16) is designed with existing signals of a DRAM macro. Signals are designed to use existing signals contained a sensing signal of n latch and a selecting switch of column. A BSG level is maintained and a noise is stably controlled by supplying signals to discharge a line of n latch sensing ground(21) into a ground at an appropriate time. A used diode element comprises an n-channel FET(field effect transistor) element(24) of low threshold voltage connected an anode in a Vbleq power supplying device. The noise control circuit contains a pulse generator. The pulse generator decides if a node of n latch sensing ground is needed to be discharged by triggering operations of n latch sensing signal and column switch selecting enable signal with a NAND gate.