| 摘要 |
PURPOSE: A semiconductor type radiation detecting apparatus with a large area and high sensitivity is provided to convert incident radiation into electric signals and be used in the medical, industrial, nuclear and other fields and improve the sensitivity for detecting radiation. CONSTITUTION: A radiation detecting apparatus having an enlarged detection area and improved radiation detecting sensitivity includes a semiconductor layer formed of an n-type amorphous or polycrystal semiconductor of high specific resistance, with a mu tau product (mobility x mean life) of holes being larger than a mu tau product of electrons. The semiconductor layer has a surface electrode formed on one surface thereof to which a negative bias voltage is applied, and a carrier collection electrode formed on the other surface. The semiconductor layer provides an electronic injection inhibiting structure on the surface electrode side thereof, and a hole injection permitting structure on the carrier collection electrode side. In time of detecting radiation, electrons, which are majority carriers, are not injected from the surface electrode side into the semiconductor layer, while holes, which are minority carriers, are injected from the carrier collection electrode side. As a result, sensitivity is improved.
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