| 摘要 |
PURPOSE: A test pattern of a semiconductor device is provided to simplify the manufacturing of an antenna of various shape and size when a test pattern is formed between individual chips on a semiconductor substrate. CONSTITUTION: A test pattern of a semiconductor device includes a first through forth pads(20,21,22,23), a transistor(24), a diode, an impurity dispersion region(28), a first through third interconnections, and an antenna. The first through forth pads(20,21,22,23) are formed sequentially in a first direction on a predetermined region of a scribe lane region of a wafer. The transistor(24) includes a gate formed in the first direction as well as a source and a drain, and the transistor is formed between the first and second pads. The diode is coupled with the extended gate. The impurity dispersion region(28) is formed near the transistor. The first through third interconnections connects the second pad, and the first and second pads with the source/drain. The antenna is implemented on the lower portion of the first through forth pads, and is insulated from the first, third, and the forth pads.
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