发明名称 METHOD FOR MANUFACTURING HIGH DIELECTRIC THIN FILM
摘要 PURPOSE: A method for manufacturing a high dielectric thin film is provided to reduce the holes in a SrBi2Tax Nb2-x O9(SBT) thin film during a manufacturing operation using a liquid precursor. CONSTITUTION: A method for manufacturing a high dielectric thin film includes following steps. At the first step, an SBT(SrBi2Tax Nb2-x) precursor in a sol state is coated on the semiconductor substrate. At the second step, the SBT(SrBi2Tax Nb2-x) precursor is dried to make an amorphous SBT(SrBi2Tax Nb2-x) layer. At the third step, the amorphous SBT(SrBi2Tax Nb2-x) layer is heated to be solidified. At the fourth step, the preceding steps are repeated until desired SBT(SrBi2Tax Nb2-x) layer thickness is attained. The SBT thin film is one of the material selected from the group including SrBi2Ta2O9, SrBi2Nb2O9, SrBi2Ti2O9, or SrBi2Tax Nb2-x O9.
申请公布号 KR20000046477(A) 申请公布日期 2000.07.25
申请号 KR19980063163 申请日期 1998.12.31
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, TAE YEONG;JEONG, JI WON
分类号 H01L21/314;(IPC1-7):H01L21/314 主分类号 H01L21/314
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