发明名称 |
METHOD FOR MANUFACTURING HIGH DIELECTRIC THIN FILM |
摘要 |
PURPOSE: A method for manufacturing a high dielectric thin film is provided to reduce the holes in a SrBi2Tax Nb2-x O9(SBT) thin film during a manufacturing operation using a liquid precursor. CONSTITUTION: A method for manufacturing a high dielectric thin film includes following steps. At the first step, an SBT(SrBi2Tax Nb2-x) precursor in a sol state is coated on the semiconductor substrate. At the second step, the SBT(SrBi2Tax Nb2-x) precursor is dried to make an amorphous SBT(SrBi2Tax Nb2-x) layer. At the third step, the amorphous SBT(SrBi2Tax Nb2-x) layer is heated to be solidified. At the fourth step, the preceding steps are repeated until desired SBT(SrBi2Tax Nb2-x) layer thickness is attained. The SBT thin film is one of the material selected from the group including SrBi2Ta2O9, SrBi2Nb2O9, SrBi2Ti2O9, or SrBi2Tax Nb2-x O9.
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申请公布号 |
KR20000046477(A) |
申请公布日期 |
2000.07.25 |
申请号 |
KR19980063163 |
申请日期 |
1998.12.31 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, TAE YEONG;JEONG, JI WON |
分类号 |
H01L21/314;(IPC1-7):H01L21/314 |
主分类号 |
H01L21/314 |
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