METHOD FOR FORMING FINE PATTERN OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a fine pattern of a semiconductor device is provided to form a pattern having a high resolution power as using a line-space pattern having a same polarity. CONSTITUTION: A negative type photoresist film(33) is coated on a semiconductor substrate. A first exposure is performed using a first exposing mask(35) on which a line-space pattern in the horizontal direction is formed. A first photosensitive film pattern is formed using a development process. A positive type photosensitive film(39) is coated on the whole structure. A second exposure is performed using a second exposing mask(41) on which a line-space is formed in the vertical direction. The exposed wafer is developed to form a quadrilateral type contact pattern.