| 摘要 |
PURPOSE: A method for forming a transistor of a semiconductor device is provided to reduce the number of steps for manufacturing transistor in order to increase yield. CONSTITUTION: A method for forming a transistor of a semiconductor device according to the present invention includes following steps. At the first step, a gate electrode(42) is formed on a substrate, n type lightly doped drain is injected into the substrate, and a thermal process is performed. At the second step, a spacer(60) is formed on a sidewall of the gate electrode. At the third step, a silicide layer(50) is formed on the surface of the gate electrode and the n type lightly doped drain. At the fourth step, an interlayer insulation layer is formed on the front face of the result of the proceeding steps, and a heavily doped polysilicon pad(90) is formed.
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