| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to simplify the manufacturing process not only for MOS transistors but also BJ transistors. CONSTITUTION: A method for manufacturing a semiconductor device includes following steps. At the first step, a field oxide layer(12) is formed on the substrate(11). At the second step, a gate oxide layer(13), a multi crystal silicon(14), a dielectric layer(15) and another multi crystal silicon(16) are vaporized on the surface of the substrate. At the third step, capacitor upper electrode(17) is formed on the upper portion of the field oxide layer(2) by using a photolithography process. At the forth step, a dummy gate(18) is formed on the surface of the center of the substrate(1). At the fifth step, a low concentration source and drain(19) are formed on the rear surface of the substrate(1). At the sixth step, a sidewall(20) is formed on the side wall of the upper electrode. At the seventh step, a gate electrode(22) is formed on the portion from where the dummy gate is removed.
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