CIRCUIT FOR ENABLING MEMORY CELL IN SEMICONDUCTOR MEMORY CELL HAVING RAPID DRIVING SPEED WHILE NOT PERFORMING REPAIRING OPERATION

摘要

PURPOSE: A circuit for rapidly enabling a memory cell in a semiconductor memory device is provided to rapidly access a normal cell without delay by using the time for substituting a repair circuit in the case of the generation of a defect in a circuit. CONSTITUTION: In the case of not repairing a semiconductor memory device, a delaying unit(100) programs a redundancy address in a redundancy circuit(110) while cutting off the fuse in a fuse box(104). The output signal of the fuse box maintains a high level for delaying an input address signal(Addrn). And, the input address signal is inputted to a first NAND gate(NAND1) by passing through a first inverter(Inv2). Therefore, a decoder driving signal(dec_en) is generated by the first and the second NAND gates and a second inverter(Inv3). And the decoder driving signal is inputted to a normal cell decoder(120) and to a redundancy cell decoder(130). In the case of repairing the memory device, the decoders operates after receiving the redundancy information. Thus, a wrong operation does not occur.