| 摘要 |
PURPOSE: A method for forming gate sidewall of a semiconductor device is provided to form the gate sidewall vertically with simplified process in order to stabilize ion injection. CONSTITUTION: A method for forming gate sidewall of a semiconductor device includes following steps. At the first step, a gate oxide layer(12) is formed on the surface of a semiconductor substrate(11). At the second step, a gate is patterned on the gate oxide layer. At the third step, low concentration impurity ion is injected in the semiconductor substrate using the gate as a mask. At the fourth step, a negative photosensitive layer(16) is coated on the surface of the semiconductor substrate. At the fifth step, a negative photosensitive pattern is formed selectively on the surface of an insulation layer of the gate. At the sixth step, the insulation layer is etched by applying the negative photosensitive layer pattern. At the seventh step, the negative photosensitive layer pattern is removed.
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