SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND FABRICATION METHOD THEREOF

摘要

PURPOSE: A semiconductor integrated circuit device and a fabrication method thereof are provided to achieve the miniaturization of a MISFET by optimizing the shape of an isolation groove. CONSTITUTION: A surface of a substrate(1) of an active region(L) surrounded by an isolation groove(2) is a flat plane in a center part of the active region, but the edge part of the surface of the substrate is slanted. The slanted face includes two slanted faces whose sloped angles are different. A first slanted face adjacent to the center part of the active region is a relatively steep slope and a second slanted face adjacent to the side wall of the isolation groove is slower than the first slanted face. The surface of the surface in the edge part of the active region is rounded.