发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要 PURPOSE: A semiconductor device and a method for manufacturing the same are provided to reduce the resistance of the multi-layer structure of the semiconductor device. CONSTITUTION: A semiconductor device includes a metal interconnection(111) as well as a via plug. The metal interconnection(111) is implemented on the semiconductor substrate. The via plug is formed so as to be connected with the surface of the metal interconnection. The outer surface of the metal interconnection is coated with a barrier metal film. One of the interconnection layers includes a plurality of metal interconnection including various line width. And the interconnection layer according to the present invention is formed so as to be connected with the surface of the plurality of metal interconnection.
申请公布号 KR20000048394(A) 申请公布日期 2000.07.25
申请号 KR19990061667 申请日期 1999.12.24
申请人 NEC CORPORATION 发明人 USAMIDAJJEUYA
分类号 H01L23/52;H01L21/3205;H01L21/768;H01L23/522;(IPC1-7):H01L21/320 主分类号 H01L23/52
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