摘要 |
A semiconductor stacked type dynamic random access memory device has a node contact hole formed in an inter-level insulating layer and a storage electrode held in contact with a source region of an access transistor through the node contact hole, and the node contact hole and the storage electrode are patterned by using a photo-lithography and an etching, wherein a photo-resist mask for the node contact hole is different in thickness from a photo-resist mask for the storage electrode by value equivalent to a half of the period of the periodicity representative of sensitized characteristics of the photo-resist in the presence of an optical standing wave in the photo-resist masks, thereby keeping the nesting tolerance between the two patterns.
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