发明名称 Silicon ribbon growth dendrite thickness control system
摘要 A method and system for controlling the thickness of a pair of dendrites in a dendritic silicon web growth process to improve dendritic silicon web production. An image of each dendrite in a web emerging from a silicon melt in a furnace is produced by a pair of cameras focused on the dendrite pair. The dendrite images are digitized, the average thickness of the dendrites is calculated, and compared to set point parameters. The average difference between the dendrite thicknesses and the set point parameters is used to control the overall furnace temperature, while the differences between the thickness of each pair are used to control the lateral temperature distribution in the furnace in order to maintain the dendrite thickness within predetermined limits. The method can be used in a closed loop configuration to automatically control the furnace temperature and lateral temperature distribution; or in an open loop configuration to provide visible feedback information to an operator who manually adjusts the furnace temperature conditions.
申请公布号 US6093244(A) 申请公布日期 2000.07.25
申请号 US19970838600 申请日期 1997.04.10
申请人 EBARA SOLAR, INC. 发明人 EASOZ, JOHN R.;MUNSHOWER, BARRY
分类号 C30B15/00;C30B15/22;C30B29/64;(IPC1-7):C30B15/26 主分类号 C30B15/00
代理机构 代理人
主权项
地址