| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to prevent dishing phenomenon on metal interconnection so as to increase the yield of the manufacturing process. CONSTITUTION: A method for manufacturing a semiconductor device includes following steps. At the first step, a metal interconnection(18) is allocated on an insulation layer(12) formed on a semiconductor substrate(11). At the second step, a depression member(13) is formed on the insulation layer. At the third step, a metal interconnection layer(16) made of metal interconnection material is accumulated on the insulation layer. At the fourth step, the metal interconnection layer accumulated on the surface of the insulation layer except for the region of the depression member is selectively removed. At the fifth step, the metal interconnection layer on the region of the depression member is polished by using a CMP(chemical mechanical polishing) operation according to the present invention.
|
