| 摘要 |
PURPOSE: A semiconductor integrated circuit device and a method for manufacturing the same are provided to perform fine operation adequate for strong dielectric layer such as BST (Ba,Sr)TiO3. CONSTITUTION: A method for manufacturing a semiconductor integrated circuit device includes following steps. At the first step, a first conductive layer is formed around an integrated circuit wafer. The first conductive layer configures a lower electrode of a data accumulation capacitive device of a memory cell. At the second step, a first dielectric layer pattern made of a high dielectric material or a strong dielectric material is formed on the first conductive layer. At the third step, a dry etching is performed on the first conductive layer so as to pattern the first conductive layer. At the forth step, a second dielectric layer pattern made of a high dielectric material or a strong dielectric material is formed on the surface of the patterned first conductive layer and the pattern of the first dielectric layer. At the fifth step, an upper electrode of the data accumulation capacitive device of a memory cell is formed on the second dielectric layer.
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