| 摘要 |
PURPOSE: A method for rinsing a semiconductor device is provided to remove Fe metal contaminants on the semiconductor substrate of which the SiO<SB POS="POST">2</SB> layer exposed to outside. CONSTITUTION: A method for rinsing a semiconductor device includes following steps. At the first step, an oxide layer SiO<SB POS="POST">2</SB> is formed on the semiconductor substrate(61) selectively. At the second step, the semiconductor substrate is placed in a gas atmosphere including Cl<SB POS="POST">2</SB> gas. At the third step, an ultra violet wave is illuminated on the semiconductor substrate. At the forth step, a SiCl<SB POS="POST">x</SB> radical is formed from the gas atmosphere. At the fifth step, the semiconductor substrate is rinsed using the SiCl<SB POS="POST">x</SB> radical.
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