发明名称 METHOD FOR FORMING INSULATING LAYER HAVING LOW DIELECTRICITY
摘要 PURPOSE: A method for forming an insulating layer having low dielectricity is to allow an insulating layer interposed between metal lines to have a desired low dielectric rate in a lateral direction. CONSTITUTION: A method for forming an insulating layer having low dielectricity comprises the steps of: providing a silicon substrate(10); depositing a metal film on the silicon substrate and patterning the deposited metal film to form a metal line(20); depositing a first SiOF film(35) as the lower protecting layer on the entire surface of the substrate; spin-coating a polymer film(50) having low dielectric rate on the SiOF film and baking the polymer film; curing the polymer film; and depositing a second SiOF film(60) as the upper protecting layer on the entire surface of the substrate.
申请公布号 KR20000045888(A) 申请公布日期 2000.07.25
申请号 KR19980062498 申请日期 1998.12.30
申请人 HYUNDAI ELECTRONICS IND. CO., LTD. 发明人 SONG, JEONG GYU
分类号 H01L21/31;(IPC1-7):H01L21/31 主分类号 H01L21/31
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