发明名称 |
METHOD FOR FORMING INSULATING LAYER HAVING LOW DIELECTRICITY |
摘要 |
PURPOSE: A method for forming an insulating layer having low dielectricity is to allow an insulating layer interposed between metal lines to have a desired low dielectric rate in a lateral direction. CONSTITUTION: A method for forming an insulating layer having low dielectricity comprises the steps of: providing a silicon substrate(10); depositing a metal film on the silicon substrate and patterning the deposited metal film to form a metal line(20); depositing a first SiOF film(35) as the lower protecting layer on the entire surface of the substrate; spin-coating a polymer film(50) having low dielectric rate on the SiOF film and baking the polymer film; curing the polymer film; and depositing a second SiOF film(60) as the upper protecting layer on the entire surface of the substrate.
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申请公布号 |
KR20000045888(A) |
申请公布日期 |
2000.07.25 |
申请号 |
KR19980062498 |
申请日期 |
1998.12.30 |
申请人 |
HYUNDAI ELECTRONICS IND. CO., LTD. |
发明人 |
SONG, JEONG GYU |
分类号 |
H01L21/31;(IPC1-7):H01L21/31 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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