METHOD FOR CREATING GATE ELECTRODE OF SEMICONDUCTOR DEVICE WITH COBALT SILICIDE MEMBRANE

摘要

PURPOSE: A method for creating gate electrode of semiconductor device with cobalt silicide membrane is provided to improve characteristics of a gate electrode by preventing degradation of a gate oxidation layer. CONSTITUTION: A device separation barrier is build on a silicon substrate(100). On activation area, a gate oxidation layer(102) and a doped poly silicon layer(104) are formed by sequence. A diffusion preventing layer(106) is made on the doped poly silicon layer(104) by vaporing titanium nitride. A cobalt silicide membrane(108) is doped on the diffusion preventing layer(106). The cobalt silicide membrane(108), the diffusion preventing layer(106), and the doped poly silicon layer(104) are self aligned by photo and etching process using a gate mask. A gate electrode(G) on the gate oxidation layer(102) is produced by patterning. Through a series manufacturing treatment, a LDD(Lightly Doped Drain), a spacer barrier(110), and a source/drain area(112) are constructed.