| 摘要 |
PURPOSE: A method for forming a gate electrode of a semiconductor device is to prevent a water mark generated in a cleaning process, thereby increasing a reliability and yield of a product. CONSTITUTION: A method for forming a gate electrode of a semiconductor device comprises steps of depositing a doped polysilicone(14) on a semiconductor device(10) on which a gate dielectric layer(12) is formed, forming a silicon protecting layer(15) on the doped polysilicon, performing a cleaning process of the result material including the silicon protecting layer, forming a tungsten silicide layer(16) on the silicon protecting layer. The silicon protecting layer is formed by depositing a source gas of SiH4. The gate electrode is composed of the gate dielectric layer, a gate conductive layer of the doped polysilicon and the tungsten silicide layer.
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