| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of treating high temperature and high pressure gas in which a reduction in time in a cooling/pressure reducing process is attained when a semiconductor is treated by gas at high temperature and under high pressure, thereby enabling increasing a treating rate in high temperature and high pressure gas treatment of the semiconductor of high quality. SOLUTION: In a cooling/pressure reducing process, cold release is started while still in a high pressure state, and at a point of time when a treating chamber reaches prescribed temperature/prescribed pressure, a reduction in pressure is started. The starting time for reducing pressure is determined based on an empirical law taking handling temperature as an object. In this way, effective temperature drop is obtained, and when pressure is reduced to atmospheric pressure, excess temperature drop is not caused. As a result, a semiconductor of good quality can be treated in an extremely short time.
|
