发明名称 ALIGNMENT MARK FOR EXPOSURE, ALIGN SYSTEM USING IT AND ALIGN METHOD USING IT
摘要 PURPOSE: An alignment mark, system and method for exposure is provided to a preferred alignment signal without damage in a chemical or mechanical polishing process. CONSTITUTION: An alignment mark, system and method comprising forming in a lower layer of the layers utilizing the chemical or mechanical polishing process on the semiconductor substrate, when an align to exposure process to make a semiconductor device, as the alignment mark of an alignment signal wave type of formed, characterized with the alignment discontinuous plural mesa pattern(55A) or trench pattern(55B) with the density in the degree of without dishing on the layer utilizing chemical or mechanical polishing process.
申请公布号 KR20000047405(A) 申请公布日期 2000.07.25
申请号 KR19990018859 申请日期 1999.05.25
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, YEONG CHANG;YUK, HEUNG JO
分类号 H01L21/68;G03F9/00;H01L21/02;H01L21/027;H01L21/304;H01L23/544;(IPC1-7):H01L21/027 主分类号 H01L21/68
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