SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A semiconductor device and a method for manufacturing the same are provided to minimize the reduction of efficiency of driving power of MOSFET(metal oxide field effect transistor). CONSTITUTION: A semiconductor device includes a first circuit and a second circuit. The first circuit is operated at a first voltage. The second circuit is operated at a second voltage which is lower than the first voltage. The gate insulation layer(27) for a transistor comprising the first circuit is made of SiO2. The gate insulation layer for a transistor comprising the second circuit is made of SiO2 plus nitrogen, which results in oxynitride(25) layer. The thickness of the gate insulation layer of the transistor comprising the first circuit is more than 5nm, and the thickness of the gate insulation layer of the transistor comprising the first circuit is less than 5nm.