发明名称 PROGRAM CIRCUIT OF SEMICONDUCTOR DEVICE
摘要 PURPOSE: A program flip-flop is provided to compact a circuit scale of an existing memory device having a redundant circuit by removing a one-shot pulse generator. CONSTITUTION: In cutting a fuse(Fa), a p-channel transistor(p1) is turned on with a low gate potential by increasing a resistance of fuse than a resistance of load resistor(Fb). A potential of point 'A' is raised to a high level to turn off a p-channel transistor(p2). A point 'B' is combined in a ground line and to be a low level. The low level maintains the p-channel transistor(p1) in an on state. A program flip-flop transfers the high level through the point 'A' as a resulted signal. Without cutting the fuse(Fa), the p-channel transistor(p2) is turned on by increasing the resistance of fuse than the resistance of load resistor. The potential of point 'A' is reduced to a ground level by turning off the p-channel transistor(p1). The program flip-flop transfers the resulted signal of low level through the point 'A'. Result signals of high level and low level correspond each to the non-cut status and the cut status of the fuse. Thereby, a redundant circuit having the program flip-flop does not need a one-shot pulse generator and a circuit scale of the redundant circuit is reduced.
申请公布号 KR20000048123(A) 申请公布日期 2000.07.25
申请号 KR19990057395 申请日期 1999.12.14
申请人 NEC CORPORATION 发明人 TAMAKI SATOSHI
分类号 G11C11/401;G11C11/41;G11C16/06;G11C29/00;G11C29/04;H01L21/82;(IPC1-7):G11C11/41 主分类号 G11C11/401
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