| 摘要 |
PURPOSE: A semiconductor memory device is provided to prevent the increase of time requiring for write verification and to repress the increase of area occupied by a latch circuit in a chip. CONSTITUTION: A memorizing method of a memory device is composed of the following steps. First or second logic level data are memorized in data memory circuits(310-312111). If the first logic level data are stored in the data memory circuits, the state of memory cells(M1-M16) is set as i. If the second logic level data are stored, the state of memory cells is maintained. If the memory cell reaches the i state while being within 1-i, the data in the data memory circuits are changed into a second logic level. If the memory cell does not reach the i state while being within 1-i, the first logic level of data is maintained. If the memory cell is in a range of i+1-n, the data in the data memory circuits are maintained. When the memory cell is transit from i-1 to i, the memory cell is controlled. Thus, the memory cell is prevented from being changed from i+1 to n. Therefore, the area occupied by a latch circuit in a chip and time for write verification is prevented from increasing.
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