| 摘要 |
PURPOSE: A borophosphorous silicate glass with inserted fluor for charging spacing with low heat estimation is provided to improve the spacing charging characteristics. CONSTITUTION: A borophosphorous silicate glass with inserted fluor for charging spacing with low heat estimation according to the present invention includes following steps. At the first step, a semiconductor device is provided in a chamber(40). At the second step, a gas silicon source is supplied. At the third step, a gas oxygen source is supplied. At the fourth step, a gas fluorine source is supplied. At the fifth step, a gas boride source is supplied. At the sixth step, a gas phosphorous is supplied. At the seventh step, a gas source is injected into the chamber. At the eighth step, a fluoride doped oxidation glass layer is solidified under the pressure of 200Torr to 750Torr and at the temperature of 480 to 725°C.
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