METHOD FOR TESTING SEMICONDUCTOR MEMORY DEVICE AND SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: A method for testing a semiconductor memory device is provided to perform by synchronously adopting an outer command and an outer address with a clock signal of high frequency at the same time CONSTITUTION: To test a semiconductor memory device, capacitors(C1-C4) are accessed in a signal line by conducting switching circuits(SW1-SW4). A control signal is offered to the signal line and a transmitting time of control signal is measured. A capacitance of signal line is changed by changing a number of conductive switching circuits(SW1-SW4). A semiconductor memory device adopted an outer command and an outer address by synchronizing a clock signal contains the signal line, plural capacitors(C1-C4), a setting circuit of test mode(13) and a selecting circuit(12).