SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF AND METHOD FOR DESIGNING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A semiconductor device of SOI(Silicon On Insulator) structure is provided to reduce the substrate floating effect and to minimize the deterioration of isolation characteristics by the partial isolation region. CONSTITUTION: According to a method for fabricating a semiconductor device, each transistor formation region of a SOI(Silicon On Insulator) layer(3) is isolated by a partial oxide film(31) where a well region is formed on the bottom. And a P-type well region(11) is formed on a bottom layer of the partial oxide film isolating between NMOS transistors, and an N-type well region(12) is formed on a bottom layer of the partial oxide film isolating between PMOS transistors. The P-type well and the N-type well are formed adjacently each other. A body region is in contact with the adjacent P-type well region, and a wire layer formed on an interlayer insulation film(4) is connected with the body region electrically through a body contact installed on the interlayer insulation film.